Report on Grant No. GR/R97986/01: Electron Holography of Semiconductor Junctions: Developing a Reliable Methodology for the Microelectronics Industry
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Precise Comparison of Two-dimensional Dopant Profi les Measured by Low-voltage Scanning Electron Microscopy and Electron Holography Techniques
As the size of metal-oxide-semiconductor field-effect transistors (MOSFETs) shrinks to nanoscale, the precise and reliable dopant profiling in shallow junctions has become important for device modeling and operation (Bertrand et al.,2004). Secondary ion mass spectrometry (SIMS) and spreading resistance profiling are widely used as practical characterization techniques to reveal one-dimensional ...
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تاریخ انتشار 2008